A Prediction method for storage life of conducting film resistor based on accelerated degradation data is proposed in this paper. First of all, the accelerated performance degradation test of the conducting film resistor is carried out by using the temperature stress. In the experiment, the total resistance of the conductive film is used as a criterion of the performance, and the accelerated performance degradation data tested by online and offline testing are obtained under conditions of different accelerated stress; Secondly, the temperature drift effect of the online data is removed by introducing the temperature factor, and the online data is fused with the offline data to identify the degenerate trajectory parameters, and the pseudo life of the conducting film resistor at each acceleration stress level is obtained; Then, the storage life of the conducting film resistor under normal stress is obtained by combining the modified three parameter temperature acceleration model; Finally, taking a conducting film resistor as an example, the applicability and effectiveness of the proposed method are verified.