The ZnO thin films which have unabridged fabric and are highly c-axis oriented is essential to the preparation luminescence apparatus which eradiate shortwave and piezoelectric film resonator. High quality crystal ZnO thin films have been deposited by RF magnetron sputtering on glass substrates. Strong UV photoluminescence and feeble deep energy eradiation are observed at room temperature. Under the different air pressures samples are studied by X-ray diffraction (XRD), PL (photoluminescence) spectrum and AFM. The surface, growth, crystallization condition and photoluminescence are analyzed. When the air pressure is in the range of 1.9 Pa-2.6 Pa, the diameter of grain will increase, when the air pressure augments from 2.6 Pa to 3.5 Pa, the diameter of grain will decrease. When the air pressure is 3.2 Pa, the grains are highly c-axis oriented compared with others. So the optimal air pressure is in the scope of 2.6 Pa-3.2 Pa. Highly c-axis uniquely oriented ZnO thin films with the FWHM of only 0.12° is deposited.