Being intelligence and high integration, solid state plasma reconfigurable antenna based on SPiN diode can be extensively used in modern communication system. A SPiN diode is designed on a high resistivity silicon wafer, and solid state plasma region is formed when a forward bias is applied on this diode, which greatly improves the antenna integration and reconfigurability. The simulation and experiment results show that the diode dimensions and boundary layers are optimized to trap carriers in welldefined channels approaching high concentration levels exceeding 1 018 cm-3. Besides, the antenna’s reconfigurability is demonstrated by turning different sections on or off to change the plasma region of the monopole. In this paper, there are two resonant frequencies at 8.83 GHz and 9.71 GHz are obtained, and the maximum gains of this monopole at two working states are 2.04 dB and 1.68 dB, respectively. Other radiation parameters of this antenna also show good performance, providing a new method for the design and application of highperformance reconfigurable antennas.