文章摘要
苏汉, 王华剑.一种基于SPiN二极管的高集成可重构天线[J].空军工程大学学报:自然科学版,2021,22(5):56-60
一种基于SPiN二极管的高集成可重构天线
A High Integration Reconfigurable Antenna Based on SPiN Diode
  
DOI:
中文关键词: SPiN  固态等离子体  可重构
英文关键词: surface PiN  solid state plasma  reconfigurable
基金项目:国家自然科学基金(61474085);武警工程大学校级立项项目(WKY202124、WJY202118)
作者单位
苏汉, 王华剑 武警工程大学信息工程学院西安710086 
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中文摘要:
      针对现代通信技术的快速发展对天线的智能化和高集成提出越来越高的需求,设计并制备了一种基于SPiN二极管的硅基固态等离子体可重构天线,SPiN二极管作为天线基本辐射单元设计在高电阻率的硅衬底上,通过施加合适的正向偏压在本征区内部形成固态等离子体区域,从而有效提升了天线系统集成度和动态可重构能力。仿真与实测结果表明,二极管本征区内部固态等离子体浓度超过了1 018 cm-3,基于优化SPiN二极管的新型高集成可重构单极子天线通过控制天线不同单元的导通与截止实现了谐振频率在8.83 GHz和9.71 GHz的两种工作状态,在不同模式下的最大增益分别达到了2.04 dB和1.68 dB。天线其他辐射参数也表现出良好的性能,为高性能可重构天线的设计和应用提供了一种新方法。
英文摘要:
      Being intelligence and high integration, solid state plasma reconfigurable antenna based on SPiN diode can be extensively used in modern communication system. A SPiN diode is designed on a high resistivity silicon wafer, and solid state plasma region is formed when a forward bias is applied on this diode, which greatly improves the antenna integration and reconfigurability. The simulation and experiment results show that the diode dimensions and boundary layers are optimized to trap carriers in well defined channels approaching high concentration levels exceeding 1 018 cm-3. Besides, the antenna’s reconfigurability is demonstrated by turning different sections on or off to change the plasma region of the monopole. In this paper, there are two resonant frequencies at 8.83 GHz and 9.71 GHz are obtained, and the maximum gains of this monopole at two working states are 2.04 dB and 1.68 dB, respectively. Other radiation parameters of this antenna also show good performance, providing a new method for the design and application of high performance reconfigurable antennas.
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