| 蔡理，马西奎.单电子晶体管(SET)及其应用[J].空军工程大学学报,2002,(6):60-63 |
| 单电子晶体管(SET)及其应用 |
| Single-electro Transistor (SET) and Its Application |
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| DOI： |
| 中文关键词: 单电子晶体管 纳米器件 量子效应 隧道效应 库仑阻塞现象 |
| 英文关键词: single-electro transistor nanodevices quantum effects tunnel effect coulomb blockage |
| 基金项目:陕西省自然科学基金资助项目（2002F34） |
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| 中文摘要: |
| 当电子器件的尺寸接近纳米尺度时，量子效应对器件工作的影响变得格外重要，就需要采用具有新机理的晶体管结构，单电子晶体管(SET)就是其中一个典型的结构。文中对比传统晶体管(MOSFET)的工作原理，分析了单电子晶体管SET的工作机理，简要概述了SET的一些应用。 |
| 英文摘要: |
| As electronic device dimensions approach nanometer scale, quantum effects become especially and increasingly important for device operation, and the transistor structure with new mechanism needs to be adopted. The single-electron transistor (SET) is a typical example of such a structure. In this paper, the operating principle of SETs is analyzed in contrast to that of the conventional transistors (MOSFET) and some applications of SETs are outlined simultaneously. |
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